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软X射线探测器

深紫外探测器

美国IRD公司，专门制造用于探测紫外、深紫外、真空极紫外和软X射线光子的探测器。IRD公司是目前唯一能够制造并商用的用于检测VUV、EUV检测的Si探测器生产厂家。

AXUV系列主要用软X射线、极紫外、X射线、低能离子等辐射探测。

光谱响应曲线

提醒：我公司现在提供由德国PTB提供的AXUV系列探测的标定服务的业务

Absolute Devices / Transfer Standards

	Sensitive Area (mm²)	Size (mm)	Package Type	Shunt Resistance (M-Ohm) @ 10 mV	Dark Current @ 50V	Capacitance @ 0V	Risetime (10%-90%)
AXUV100	100	10 X 10	Ceramic	100	*	20 nF**	10 µSec**
AXUV100EUT ##	100	10 X 10	Ceramic	100	*	20 nF**	10 µSec**
AXUVSP2	96	6 X 16	Ceramic	100	*	20 nF**	10 µSec**
AXUV96	96	6 X 16	Metal	100	*	20 nF**	10 µSec**
AXUV50HE1	50	8 Ø	Ceramic	10	*	3 nF**	6 µSec**
AXUV20	20	5 Ø	Metal	1000	*	2 nF**	2 µSec**
AXUV20A	20	5 Ø	Ceramic	100	*	5 nF**	1 µSec**
AXUV20BNC	20	5 Ø	BNC	1000	*	2 nF**	2 µSec**
AXUV20HE1	20	5 Ø	Ceramic	10	*	500 pF**	0.2 µSec**
AXUV300 #	330	22 X 15	Plastic	20	*	40 nF**	15 µSec**
AXUV300M/G	330	22 X 15	Metal	20	*	40 nF**	15 µSec**
AXUV576	576	24 X 24	Metal	5	*	120 nF**	50 µSec**
AXUV10	10	10 X 1	Ceramic	1000	*	2 nF**	2 µSec**
AXUV36@	36	6 X 6	Metal	10	*	10 nF**	10 µSec**

# AXUV-1600 with five AXUV-300 chips is available
## AXUV-100 photodiode with eutectically mounted chip for vacuum environments lower than 10^-9 torr
@ With 5 micron physical silicon thickness.All AXUV products have at least 7 orders of magnitude of dynamic range.
Please specify if detectors with larger than dynamic range are required.

* May be selected for a specific application at no additional cost.
** Devices with better values may be selected.

Ref: "Stable Silicon Photodiodes for Absolute Intensity Measurements in the VUV and Soft X-ray Regions" E.M. Gullikson et. al., J. of Electron Spectroscopy and Related Phenoma, Vol. 80, 313-316 (1996)
AXUV Photodiodes for Position SensingClick name to download DWF Version of image

	Central Slit (mm)	Sensitive Area (mm²)	Size (mm)	Package Type	Shunt Resistance (M-Ohm)	Dark Current @ 50V	Capacitance @ OV	Risetime (10-90%)
AXUVPS1	0.5Ø	11 (X4)	7.6Ø	Metal	100	*	2 nF**	2µSec**
AXUVPS1A AXUVPS1ALP	0.7Ø	11(X4)	7.6Ø	Metal Ceramic	100	*	2 nF**	2µSec**
AXUVPS1B AXUVPS1BLP	1Ø	11 (X4)	7.6Ø	Metal	100	*	2 nF**	2µSec**
AXUVPS1G AXUVPS1GLP	1.6Ø	11 (X4)	7.6Ø	Metal	100	*	2 nF**	2µSec**
AXUVPS1D AXUVPS1DLP	0.5 X 2.5	11 (X4)	7.6Ø	Metal	100	*	2 nF**	2µSec**
AXUVPS1E AXUVPS1ELP	2 X 4	11 (X4)	7.6Ø	Metal	100	*	2 nF**	2µSec**
AXUVPS1F AXUVPS1FLP	5Ø	11 (X4)	7.6Ø	Metal	100	*	2 nF**	2µSec**
AXUVPS6 AXUVPS6S	N/A	11 (X4)	7.6Ø	Metal	100	*	2 nF**	2µSec**
AXUVPS2	1 X 2	25 (X4)	5 X 5 (X4)	Metal	100	*	5 nF**	4µSec**
AXUVPS3	N/A	25 (X4)	5 X 5 (X4)	Metal	100	*	5 nF**	4µSec**
AXUVPS2LP	N/A	25 (X4)	5 X 5 (X4)	Metal	100	*	5 nF**	4µSec**
AXUVPS3C	N/A	25 (X4)	5 X 5 (X4)	Ceramic	100	*	5 nF**	4µSec**
AXUVPS4 AXUVPS4C	N/A N/A	1.25(X4)	2.5Ø	To-5	1000	*	0.18 nF**	0.1µSec**
AXUVPS5	N/A	24 (X4)	3X8		100	*	5 nF**	4µSec**
AXUVPSV	N/A	330	22 X 15	PSV	20	*	40 nF**	15µSec**
AXUV600M	N/A	150 (X4)	27 X 27	Metal	20	*	30 nF**	12µSec**

Notes:	*	May be selected for a specific application at no additional cost.
	**	Devices with better values may be selected.
	#	Four detectors mare needed to realize a variable x-y slit.

Ref: "A Beam Tracking Optical Table of Sychrotron X-ray Beamline" R.G. Van Sifhout, Nucl. Instrum. and methods A, Vol. 403, p. 153-160 (1998)

AXUV Photodiode Arrays

	Sensitive Area (mm2)	Size (mm)	Package Type	Shunt Resistance (M-Ohm)	Dark Current @ 50V	Capacitance @ 0V	Risetime (10-90%)
AXUV-3ELA#	1 (x3)	1 x 1 (x3)	Ceramic	1000	300 pA	25 pF	2 nSec
AXUV-10EL#	1 (x10)	1 x 1 (x10)	Ceramic	1000	10 nA	25 pF	1 nSec
AXUV-16ELO/G	10 (x16)	2 x 5 (x16)	Ceramic	100	*	2 nF**	0.5 µSec**
AXUV-16EL	10 (x16)	2 x 5 (x16)	Ceramic	100	*	2 nF**	0.5µSec**
AXUV-20EL	3 (x20)	0.75 x 4 (x20)	Ceramic	300	*	1 nF**	0.2µSec**
AXUV-22EL	4 (x22)	1 x 4 (x22)	Ceramic	200	*	1 nF**	0.2µSec**

Notes:	# Use with 10-50 volts bias.
	* May be selected for a specific application at no additional cost.
	** Devices with better values may be selected

Ref: "High Resolution Bolometry on the Alcator C-Mod Tokamak (Invited)" R.L. Boivin, J.A. Goetz, E.S. Marmar, J.E. Rice and J.L. Terry, Rev. Sci. Instrum. Vol 70 (1), 260-264 (1999)

High Speed AXUV Photodiodes
(use with 10-50 volts bias)

	Sensitive Area (mm²)	Size (mm)	Package Type	Shunt Resistance (M-Ohm)	Dark Current @ 50V	Capacitance @ 0V	Risetime (10%-90%) @ 50 V Bias
AXUV20HS1	20	5 Ø	Ceramic	20	20	0.7 nF	2 nSec#
AXUV20HS1BNC	20	5 Ø	BNC	20	20	0.7 nF	2 nSec#
AXUV12	12	4 Ø	TO-5	100	20 nA	2 nF	4 nSec
AXUV5	5	2.5 Ø	TO-5	100	10 nA	1 nF	2 nSec
AXUVHS1*	.05	.22 X .22	SMA	1000	100 pA	20 pF	0.25 nSec
AXUVHS2*	.05	.22 X .22	SSMA	1000	100 pA	20 pF	0.25 nSec
AXUVHS3*	.005	.07 X .07	SSMA	100	50 pA	15 pF	80 pSec
AXUVHS4*	.026	.16 X .16	SMA	1000	100 pA	20 pF	200 pSec
AXUVHS5*	1	1 X 1	SMA	1000	200 pA	40 pF	700 pSec
AXUVHS5A*	1	1 X 1	TO46	1000	200 pA	40 pF	700 pSec
AXUVHS6*	.00063	.025 X .025	SSMA	1000	20 pA	15 pF	50 pSec

# 1n-sec@150 volts with high speed amplifiers
*Available with free standing filters

Ref: "Silicon Photodiode Characterization from 1 eV to 10 KeV" G.C. Idzorex and R.J. Bartlett, SPIE Vol. 3114, 349-356 (1997)

With Directly Deposited Filters To avoid use of fragile freestanding thin filters during XUV experiments and also in space missions, visible blind AXUV photodiodes with integrated thin film filters have been developed. The table below lists available AXUV diodes with different filter materials and their passbands. These filtered diodes exhibit visible light blocking of at least four orders of magnitude. Diodes with higher visible light blocking can be specially selected if required. IRD is continuously making AXUV diodes with many different filters. Users are requested to contact us for their special filter requirements.

The advantages of these integrated detector-filter devices over presently used separate freestanding thin foil filters and detectors are compactness, higher reliability, ease in manufacturing and handling, more stable bandpass and flexibility in design as the filter thicknesses are determined by optical constants and not by the mechanical strength requirement.

The filtered AXUV diodes have been successfully used in the SNOE and SOHO satellites by scientists at the National Center for Atmospheric Research and by scientists at University of Southern California respectively. They are also being used on the HBT-EP tokamak at Columbia University as detectors for the soft X-ray tomography system. We anticipate that these diodes will be extremely useful in future space missions and other applications like soft x-ray radiometry, x-ray lithography, x-ray microscopy and XUV spectroscopy.

Product Name	Filter Thickness	Pass Band
AXUV100Cr/W/Au	8/100/400 nm	< 1 nm
AXUV100Al/Fe *	400/450 nm	1.7-4 nm
AXUV100Al/Mn2 *	500/500 nm	1.9-4 nm
AXUV100Al/V *	400/600 nm	3-5 nm
AXUV100Ti/Zr/Al *	250/100/100 nm	2.8-5 nm
AXUV100Al/CaF2/Ag *	200/1000/250 nm	3.5-5.5 nm
AXUV100Ti/Mo/Au	40/200/100 nm	5-12 nm
AXUV100Ti/Mo/C	50/200/70 nm	5-13 nm
AXUV100Ti/Mo/Si/C	40/200/100/50 nm	5-15 nm
AXUV100Zr/C	200/50 nm	6-15 nm
AXUV100Ti/Zr/Au #	20/200/100 nm	6-12 nm
AXUV100Ti/C #	500/50 nm	< 7 nm
AXUV100Ti/Pd #	200/100 nm	< 11 nm
AXUV100Si/Zr *	100/200 nm	11-17 nm
AXUV100Mo/Si	350/500 nm	12.2-15.8 nm
AXUV100Mo/Si2	200/100 nm	12.2-15.8 nm
AXUV100Ti/C2	200/50 nm	< 12 nm
AXUV100Al/Zr *	125/125 nm	17-21 nm
AXUV100Al	150 nm	17-80 nm
AXUV100Al2	40 nm	17-80 nm
AXUV100GA12	50 nm	17-80 nm
AXUV100Al3	100 nm	17-80 nm
AXUV100Al4 *	1000 nm	17-80 nm
AXUV100Al5	300 nm	17-80 nm
AXUV100Al/C	200/50 nm	17-36 nm
AXUV100Al/Nb/C #	250/50/50 nm	18-21 nm
AXUV100Al/Mn #	200/100 nm	25-35 nm
AXUV100Al/Mn3	270/100 nm	25-35 nm
AXUV100Cr/Al	60/150 nm	28-40 nm
AXUV100Cr/Al2 #	100/200 nm	27-37 nm
AXUV100Cr/Al3	100/270 nm	27-37 nm
AXUV100Sn: 2% Ge	200/10 nm	53-74 nm
AXUV100In/SiC	200/20 nm	76-99 nm
AXUV100LA	200 nm	117-131 nm
AXUVSP2Al	150 nm	17-80 nm
AXUV96Al #	300 nm	22-78 nm
AXUV96Ti/Mo/C #	50/200/70 nm	5-13 nm
AXUV96Sn: 2% Ge	200/10 nm	53-74 nm
AXUV96In/SiC	200/20 nm	76-99 nm
AXUV20Ti/Mo/C	50/200/70 nm	5-13 nm
AXUV20Mo/Si	43.5/500 nm	12.2-15.8 nm
AXUV20Al	300 nm	17-80 nm
AXUV20Ti/C	200/50 nm	< 15 nm
AXUV20HS1Si/Zr	100/200 nm	11-18 nm
AXUV20HS1Al5	300 nm	17-80 nm
AXUV20HS1Mo/Si	350/500 nm	12.2-15.8 nm
AXUV20AMo/Si	350/500 nm	12.2-15.8 nm
AXUV20ASi/Zr	100/200 nm	11-18 nm