美国IRD公司，专门制造用于探测紫外、深紫外、真空极紫外和软X射线光子的探测器。IRD公司是目前唯一能够制造并商用的用于检测VUV、EUV检测的Si探测器生产厂家。可用于紫外、深紫外的探测器有两大系列: |
- UVG 系列:更加适合于130nm -1100nm 光相关的检测，可集成制定波长窄带滤光片
- SXUV系列:适用于高光通量的场合，如UV/EUV脉冲辐射、准分子激光等，脉冲能量密度超过0.1 µJ/cm2。可集成制定波长窄带滤光片。
- AXUV系列主要用软X射线、极紫外、X射线、低能离子等辐射探测。详见辐射探测系列探测器.
|
| 光谱响应曲线 |
 |
| UVG系列技术参数（22摄氏度）: |
| Sensitive Area (mm^2) | Size (mm) | Package Type | Shunt Resistance (M-Ohm) | Dark Current at 50V | Capacitance at 0V | Risetime (10-90%) | UVG100 | 100 | 10 X 10 | Ceramic | 100 | * | 20 nF** | 10 µSec** | UVG300 | 330 | 22 X 15 | Plastic | 20 | * | 40 nF** | 15 µSec** | UVG20 | 20 | 5 Ø | TO-8 | 1000 | * | 4 nF** | 2 µSec** | UVG20C | 20 | 5 Ø | TO-8 | 1000 | * | 4 nF** | 2 µSec** | UVG20BNC | 20 | 5 Ø | BNC | 1000 | * | 2 nF** | 2 µSec** | UVG20B | 20 | 5 Ø | Ceramic | 100 | * | 5 nF** | 1 µSec** | UVG20HED | 20 | 5 Ø | Ceramic | 100 | * | 5 nF** | 1 µSec** | UVG12 | 12 | 4 Ø | TO-5 | 1000 | * | 2 nF** | 2 µSec** | UVG10 | 10 | 10 X 1 | Ceramic | 1000 | * | 2 nF** | 2 µSec** | UVG12C | 12 | 4 Ø | TO-5 | 1000 | * | 2 nF** | 2 µSec** | UVG5 # | 5 | 2.5 Ø | TO-5 | 1000 | 2 nA | 200 pF | < 2 nSec | UVG5S | 5 | 2.5 Ø | TO-5 | 1000 | 2 nA | 200 pF | < 2 nSec | UVG576 | 576 | 24 X 24 | Metal | 10 | * | 100 nF | 50 µSec** | UVGHS1 # | .05 | .22 X .22 | SMA | 1000 | 100 pA | 5 pF | .25 nSec | UVGHS2 # | .05 | .22 X .22 | SSMA | 1000 | 100 pA | 5 pF | .25 nSec | UVGHS3 # | .005 | .07 X .07 | SSMA | 1000 | 50 pA | 15 pF | 80 pSec | UVGHS4 # | .026 | .16 X .16 | SMA | 1000 | 100 pA | 150 pF | 200 pSec | UVGHS5 # | 1 | 1 X 1 | SMA | 1000 | 200 pA | 400 pF | 700 pSec | UVGHS6 # | .00063 | .025 X .025 | SSMA | 1000 | 20 pA | 15 pF | 50 pSec | UVGPS1 | 11 (X4) | 7.6 Ø | Metal | 100 | * | 2 nF | 1 µSec** | UVGPS4S | 1.25 (X4) | 2.5 Ø | Metal | 20 | * | 0.1 nF | 0.5 µSec |
|
| SXUV系列技术参数 |
| Sensitive Area (mm^2) | Size (mm) | Package Type | Shunt Resistance (M-Ohm) | Dark Current at 50V | Capacitance at 0V | Risetime (10-90%) | SXUV576 | 576 | 24X24 | Metal | 5 | * | 1000 nF* | 2 µSec** | SXUV300 | 330 | 22X15 | Metal | 10 | * | 40 nF* | 15 µSec** | SXUV300C | 330 | 22X15 | Ceramic | 5 | * | 40nF | 15 µSec** | SXUV100 | 100 | 10 X 10 | Ceramic | 10 | * | 20 nF** | 10 µSec** | SXUV100LP | 100 | 10 X 10 | Ceramic | 10 | * | 20 nF** | 10 µSec** | SXUV100LPA | 100 | 10 X 10 | Cermaic | 10 | * | 20 nF** | 10 µSec** | SXUV100RPD*** | 100 | 10 X 10 | Ceramic | 10 | * | 20 nF** | 10 µSec** | SXUV20 | 20 | 5.0 Ø | TO-8 | 100 | * | 4 nF** | 2 µSec** | SXUV20RPD*** | 20 | 5.0 Ø | TO-8 | 100 | * | 4 nF** | 2 µSec** | SXUV20A | 20 | 5.0 Ø | Ceramic | 100 | * | 4 nF** | 2 µSec** | SXUV20ARPD *** | 20 | 5.0 Ø | Ceramic | 100 | * | 4 nF** | 2 µSec** | SXUV20C | 20 | 5.0 Ø | TO-8 | 100 | * | 4 nF** | 2 µSec** | SXUV20BNC | 20 | 5.0 Ø | BNC | 100 | * | 4 nF** | 2 µSec** | SXUV10A | 10 | 1 X 10 | C10A | 400 | * | 1 nF** | 0.6 µSec** | SXUV5 # | 5 | 2.5 Ø | TO-5 | 200 | 20 nA | 200 pF** | < 2 µSec** | SXUV5S# | 5 | 2.5 Ø | TO-5 | 200 | 20 nA | 200 pF** | < 2 µSec** |
|
阅读: 1735
: 光电倍增管