| ?Model | Sensor Area
[mm2]??? | Peak Sensitivity
[nm]??? | ?Use Rangea注
[nm] | Bias Voltage [V]?? | ?Package options? | | ?0701BG | ?1.0 | ?560 | ?450 ?~ ?900?? | ?20.0 ± 5.0?? | ?TO-18 or Ceramic?? | | ?0609BG4MM | ?4.0 | ?580 | ?480 ~ 740?? | ?20.0 ± 0.5 | ?PCB: 3 options?? | | ?0710G9MM | ?9.0 | ?580 | ?460 ?~ ?800?? | ?16.3 ± 1.3?? | ?TO-5 or PCB: 1 option?? |
注: Spectral range where the photon detection efficiency is >20%
0701BG 性能參數（22Co： | Parameter | Units | Typical Value | Comments | | Peak Sensitivity Wavelength | nm | 580 | | | Single Photon Detection Efficiency | % | 26 / 13 | at 580nm / at 450nm | | Operating Voltage | V | 19.5 ... 20.5 | Peak efficiency at 20.5V | | Gain | | 150'000 | At bias of 20.5V and using a 40ns integration window for signal readout | | Dark Current | μA | <18 | | | Capacitance | pF | 170 | At a readout rate of 1MHz | | Excess Noise Factor | | <1.1 | At bias of 20.5V, readout rate of 1MHz and 580nm incident illumination | | Signal Rise Time | ns | <3.0 | | | Number of Micro-cells | | 1700 | | | Fill or Geometric Factor | % | >70 | | | Operating Temperature | Co | -50 ... +40 | | | Storage Temperature | Co | -40 ... +60 | Max. sensor temp. during soldering: 110C |
0606BG4MM性能參數
General purpose SSPM with a 4.4mm2 sensitive area. This SSPM is specifically targeted for green and red light applications and shows excellent overall characteristics. When modestly cooled, this device offers truly outstanding performance for photon counting in the wavelength domains of interest for many bio and life science applications. | Parameter | Units | Typical Value | Comments | | Peak Sensitivity Wavelength | nm | 560 | | | Single Photon Detection Efficiency | % | 40 / >15 | at 560nm / 450nm | | Operating Voltage | V | 15 ... 25 | | | Gain | | 400'000 | At bias of 20V, using a 40ns integration window and a 0.5nF signal shaping capacitor | | Dark Current | μA | 10.0 | | | Capacitance | pF | 40.0 | At a readout rate of 1MHz | | Excess Noise Factor | | <1.2 | At 20V bias, Readout rate of 1MHz and 560nm incident illumination | | Signal Rise Time | ns | <0.5 | | | Temp. coefficient of Gain | %/Co | <1.0 | | | Number of Micro-cells | | >500 | | | Fill or Geometric Factor | % | >70 | | | Operating Temperature | Co | -100 ... +50 | | | Storage Temperature | Co | -40 ... +60 |
0710G9MM性能參數
General purpose SSPM with a 9.0mm2 sensitive area. This SSPM covers a broad spectral range with a photon detection efficiency exceeding 20% over most of the visible spectrum. It is offered on a compact, non-magnetic PCB package with backside pins allowing for the assembly of compact sensor arrays and matrices. The sensor die is encapsulated in epoxy assuring easy handling and safe direct coupling to light sources. | Parameter | Units | Typical Value | Comments | | Peak Sensitivity Wavelength | nm | 580 | | | Single Photon Detection Efficiency | % | 40 / 19 | at 580nm / at 450nm | | Operating Voltage | V | 15.0 ... 17.5 | Peak efficiency at 20.5V | | Gain | | 180'000 | At bias of 17.0V and using a 50ns integration window for signal readout | | Dark Current | μA | 75 | | | Capacitance | pF | 300 | At a readout rate of 1MHz | | Excess Noise Factor | | <1.15 | At bias of 20.5V, readout rate of 1MHz and 580nm incident illumination | | Signal Rise Time | ns | <2.0 | | | Number of Micro-cells | | 8100 | | | Fill or Geometric Factor | % | >60 | | | Operating Temperature | Co | -40 ... +40 | | | Storage Temperature | Co | -40 ... +60 | Max. sensor temp. during soldering: 110C |
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