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SiC紫外探测器
| 德国的IFW公司在紫外探测器领域有着20多年的研发、生产经验，其SiC 紫外探测器产品种类丰富，多达100多种，相对于Si，金刚石薄膜，TiO2，钻石等紫外探测器，拥有巨大的优势！是您紫外探测应用的首选产品！ |
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| 主要特点 |
- 光谱响应范围仅限于200-400nm 或 (210-380nm),不需要额外的滤光片来屏蔽可见光或红外辐射
- 试验证明，即使在1000W/m2强度的254nm光辐照下，仍然保持长时间的稳定性
- 绝佳的温度稳定性(温漂系数: Tk < -0.06%/K),在150摄氏度的高温下，仍然保持长时间稳定性
- 非常低的暗电流(fA Rang)
- 可集成航天质量标准的紫外窄带滤光片: UVA UVB UVBC UVBC2 UVC
- 提供集成放大器电路
- 多达100多种不同型号，充分满足不同的紫外探测需求
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| 光谱响应曲线(含滤光片) |
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| 产品系列 |
- 标准产品 JECXX 系列
- 集成放大器系列 JIC 系列
- 高温封装系列 JECXXHT 系列 (标准产品工作温度可达+ 70 °C, HT可达150°C)
- 位移探测器系列 JQC4 四象限探测器
- 红斑效应探测 JEC XX E 系列
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| 产品选购指南 |
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Part Number
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Description |
| single SiC-photodiodes 标准产品 |
| JEC 0,1S(S) |
0,3mm x 0,3mm |
SiC-photodiode |
| JEC 0,3S(S) |
0,5mm x 0,5mm |
SiC-photodiode |
| JEC 1S(S) |
1mm x 1mm |
SiC-photodiode |
| JEC 4 |
2mm x 2mm |
SiC-photodiode |
| JEC 0,1IS |
SiC-photodiodes with different active areas, detector chip isolated to package |
| JEC 0,1IS_Z.0.e |
| JEC 0,3IS |
| JEC 0,3IS_Z.0.e |
| JEC 1IS |
| JEC 1IS_Z.0.e |
| JEC 0,1S(S)HT |
SiC-photodiodes with different active areas for long term operating temperatures up to +150°C |
| JEC 0,3S(S)HT |
| JEC 1S(S)HT |
| JEC 4HT |
| JEC 0,1* |
SiC-photodiodes with integrated radiation hard filters for UV-C, UV-BC, UV-B und UV-A measurement |
| JEC 0,3* |
| JEC1* |
| JEC 0,3E.0.e |
ERYCS® erythemal sensor (measurement of natural sun) |
| JEC 1I-DE |
| JEC 1+0,1I-DE |
ERYCS® erythemal sensor (measurement of artificial sun and exposure lamps) |
| SiC-quadrant photodiodes四象限探测器 |
| JQC4 |
SiC-quadrantphotodiode |
| SiC-photodiodes with integrated amplifier |
| JIC 117…JIC119 |
SiC-photodiodes with different size of active area and integrated amplifier (single supply voltage, various gains and externally adjustable) |
| JIC 317_318_319.0.e |
| JIC 137…JIC139 |
| JIC 337_338_339.0.e |
| JIC 157…JIC 159 |
| JIC 357_358_359.0.e |
| JIC 117A…JIC 119A |
SiC-photodiodes with integrated amplifier and radiation hard filter for UV-A-measurement |
| JIC 317A_318A_319A.0.e |
| JIC 137A…JIC 139A |
| JIC 337A_338A_339A.0.e |
| JIC 157A…JIC.159A |
| JIC 357A_358A_359A.0.e |
| JIC 127B…JIC 129B |
SiC-photodiodes with integrated amplifier and radiation hard filter for UV-B-measurement |
| JIC 327B_328B_329B.0.e |
| JIC 147B…JIC 149B |
| JIC 347B_348B_349B.0.e |
| JIC 167B…JIC.169B |
| JIC 367B_368B_369B.0.e |
| JIC 127C…JIC.129C |
SiC-photodiodes with integrated amplifier and radiation hard filter for UV-C-measurement |
| JIC 327C_328C_329C.0.e |
| JIC 147C…JIC 149C |
| JIC 347C_348C_349C.0.e |
| JIC 167C…JIC.169C |
| JIC 367C_368C_369C.0.e |
| JIC 149L |
SiC-photodiode with integrated amplifier replacement for SFH530 made by OSRAM |
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